SEMICONDUCTOR DEVICE - RENESAS ELECTRONICS CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2015/114758

Kind Code:

A1

Abstract:

To improve characteristics of a semiconductor device. This semiconductor device has: a coil (CL1) and wiring (M2), which are formed on an interlayer insulating film (IL2); wiring (M3) formed on the interlayer insulating film (IL3); and a coil (CL2) and wiring (M4), which are formed on the interlayer insulating film (IL4). A distance (DM4) between the coil (CL2) and the wiring (M4) is larger than a distance (DM3) between the coil (CL2) and the wiring (M3) (DM4>DM3). Furthermore, the distance (DM3) between the coil (CL2) and the wiring (M3) is equal to or more than a sum of a film thickness of the interlayer insulating film (IL3) positioned between the coil (CL1) and the coil (CL2), and a film thickness of the interlayer insulating film (IL4). Consequently, a withstand voltage of regions, such as a region between the coil (CL2) and the wiring (M4), can be improved, said regions being susceptible to generating a large voltage difference. Furthermore, a seal ring forming region (1C) that surrounds a transformer forming region (1A) and a peripheral circuit forming region (1B) is provided, and moisture resistance is improved.

Inventors:

IGARASHI TAKAYUKI (JP)
FUNAYA TAKUO (JP)

Application Number:

PCT/JP2014/051982

Publication Date:

August 06, 2015

Filing Date:

January 29, 2014

Export Citation:

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Assignee:

RENESAS ELECTRONICS CORP (JP)

International Classes:

H01L21/822; H01L27/04

Domestic Patent References:

WO2010113383A1

2010-10-07

Foreign References:

JP2001036017A	2001-02-09
JP2009295804A	2009-12-17
JP2011014719A	2011-01-20
JP2009302418A	2009-12-24
JP2003309184A	2003-10-31
JP2009141011A	2009-06-25
JP2004311655A	2004-11-04
JP2004281838A	2004-10-07

Other References: