Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/009719
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising: a first circuit (10, a high-side circuit) that operates with a first potential (VS) being used as a reference potential; and a second circuit (20, a low-side circuit) that operates with a second potential (GND) different from the first potential (VS) being used as a reference potential, wherein it can be detected with reliability that a negative voltage has been applied to the first circuit (10). The high-side circuit (10) comprises a current source (13). The current source (13) supplies a current (I-BIAS) to the low-side circuit (20), and varies the current (I-BIAS) according to whether the first potential (VS) is a negative voltage relative to the second potential (GND). The low-side circuit (20) comprises a negative voltage detection circuit (25). The negative voltage detection circuit (25) monitors the variation of the current (I-BIAS) supplied from the current source (13) and detects that a negative voltage has been applied to the high-side circuit (10).
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Inventors:
AKAHANE MASASHI (JP)
Application Number:
PCT/JP2015/064858
Publication Date:
January 21, 2016
Filing Date:
May 25, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H03K17/00; H01L21/822; H01L27/04; H02M1/00; H03K5/08
Foreign References:
| JP2009060226A | 2009-03-19 | |||
| JP2010263116A | 2010-11-18 |
Attorney, Agent or Firm:
HOSHINO, HIROSHI (JP)
Yuji Hoshino (JP)
Yuji Hoshino (JP)
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