Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/111306
Kind Code:
A1
Abstract:
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by electrolysis of water, the crystal structure of the active layer is changed between a ferromagnetic metal and an antiferromagnetic insulating body.
Inventors:
OHTA HIROMICHI (JP)
KATASE TAKAYOSHI (JP)
SUZUKI YUKI (JP)
KATASE TAKAYOSHI (JP)
SUZUKI YUKI (JP)
Application Number:
PCT/JP2016/050206
Publication Date:
July 14, 2016
Filing Date:
January 06, 2016
Export Citation:
Assignee:
UNIV HOKKAIDO NAT UNIV CORP (JP)
International Classes:
H01L45/00; H01F1/40; H01F10/193; H01L29/66
Foreign References:
| JP2010114231A | 2010-05-20 | |||
| JP2009260167A | 2009-11-05 | |||
| JP2013183040A | 2013-09-12 |
Other References:
See also references of EP 3229281A4
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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