Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/114138
Kind Code:
A1
Abstract:
To further improve the inverse recovery resistance of a diode element. The present invention is provided with: a drift layer (1) of a first conductivity type; an anode region (3) of a second conductivity type, provided on the drift layer (1); a pull-out region (4) of the second conductivity type, provided in contact with the anode region (3) at a position surrounding the anode region (3); and a field-limiting ring region (6j) of the second conductivity type, provided on the drift layer (1) so as to be set apart from the pull-out region (4) at a position surrounding the pull-out region (4). The pull-out region (4) is configured so as to be deeper than the anode region (3) and the field-limiting ring region (6j).
Inventors:
KAKEFU MITSUHIRO (JP)
Application Number:
PCT/JP2016/000155
Publication Date:
July 21, 2016
Filing Date:
January 14, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/861; H01L29/06; H01L29/868
Foreign References:
| JP2005093550A | 2005-04-07 | |||
| JP2012165013A | 2012-08-30 |
Attorney, Agent or Firm:
SUZUKI, SOHBE (JP)
Sobei Suzuki (JP)
Sobei Suzuki (JP)
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