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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/138398
Kind Code:
A1
Abstract:
A semiconductor device (13) is provided with: a substrate (1), a drift layer (2), and a first ground layer (3) disposed in the stated order; a first opening part (10) that passes through the first ground layer (3) and reaches up to the drift layer (2); a first regrowth layer (6) and a second regrowth layer (7) formed along the upper surface of the first ground layer (3) and the recessed surface of the first opening part (10); a gate electrode (G) disposed above the second regrowth layer (7); a second opening part (11) that passes through the second regrowth layer (7) and the first regrowth layer (6) and reaches up to the first ground layer (3); a source electrode (S) disposed so as to cover the second opening part (11), the source electrode (S) being electrically connected to the first ground layer (3); and a drain electrode (D) disposed on the rear surface of the substrate (1). The second regrowth layer (7) has an upper surface part (7a) substantially parallel to the substrate (1), and a side surface part (7b) along the side surface of the first opening part (10). The gate electrode (G) is provided selectively to the upper surface part (7a).

Inventors:
UJITA SHINJI
SHIBATA DAISUKE
TAMURA SATOSHI
Application Number:
PCT/JP2017/003274
Publication Date:
August 17, 2017
Filing Date:
January 31, 2017
Export Citation:
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Assignee:
PANASONIC CORP (JP)
International Classes:
H01L21/337; H01L21/338; H01L27/098; H01L29/12; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
WO2015122135A12015-08-20
Foreign References:
JP2006286910A2006-10-19
JP2011155221A2011-08-11
Attorney, Agent or Firm:
TOKUDA Yoshiaki et al. (JP)
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