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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/208301
Kind Code:
A1
Abstract:
Provided is a semiconductor device that comprises: a substrate; a drift region of a first conductivity type formed in a main surface of the substrate; a well region of a second conductivity type formed in a main surface of the drift region; a source region of the first conductivity type formed in the well region; a gate trench formed in a vertical direction from the main surface of the drift region and contacting the source region, the well region, and the drift region; a drain region of the first conductivity type formed in the main surface of the drift region; a gate electrode formed on the surface of the gate trench with a gate insulating film interposed therebetween; a protective region of the second conductivity type formed on a surface of the gate insulating film facing the drain region; and a connection region of the second conductivity type formed in contact with the well region and the protective region.

Inventors:
NI, Wei (LTD. Intellectual Property Department1-1, Morinosatoaoyama, Atsugi-sh, Kanagawa 23, 〒2430123, JP)
HAYASHI, Tetsuya (LTD. Intellectual Property Department1-1, Morinosatoaoyama, Atsugi-sh, Kanagawa 23, 〒2430123, JP)
HAYAMI, Yasuaki (LTD. Intellectual Property Department1-1, Morinosatoaoyama, Atsugi-sh, Kanagawa 23, 〒2430123, JP)
TANAKA, Ryota (LTD. Intellectual Property Department1-1, Morinosatoaoyama, Atsugi-sh, Kanagawa 23, 〒2430123, JP)
Application Number:
JP2016/065909
Publication Date:
December 07, 2017
Filing Date:
May 30, 2016
Export Citation:
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Assignee:
NISSAN MOTOR CO., LTD. (2 Takara-cho, Kanagawa-ku Yokohama-sh, Kanagawa 23, 〒2210023, JP)
International Classes:
H01L21/336; H01L29/78; H01L29/786
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (Toranomon Kotohira Tower, 2-8 Toranomon 1-chome, Minato-k, Tokyo 01, 〒1050001, JP)
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