Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/047300
Kind Code:
A1
Abstract:
This semiconductor device is characterized by being provided with a lower electrode, a semiconductor chip which is provided above the lower electrode, a pressure pad which is provided above or below the semiconductor chip, an upper electrode which is provided above a structure in which the pressure pad and the semiconductor chip overlap, and a connection conductor which provides a new current path between the lower electrode and the upper electrode only in the case that the distance between the lower electrode and the upper electrode is greater than a predetermined value; the distance between the lower electrode and the upper electrode is variable, and regardless of the distance between the lower electrode and the upper electrode, the pressure pad electrically connects the lower electrode and the upper electrode with the semiconductor chip interposed therebetween.
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Inventors:
FUJITA SHIGETO (JP)
MATSUDA TETSUYA (JP)
MATSUDA TETSUYA (JP)
Application Number:
PCT/JP2016/076649
Publication Date:
March 15, 2018
Filing Date:
September 09, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L25/07; H01L23/48; H01L25/18; H01R11/01
Foreign References:
| JP2000223658A | 2000-08-11 | |||
| JP2013048239A | 2013-03-07 | |||
| JPH09107068A | 1997-04-22 | |||
| JPS63211526A | 1988-09-02 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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