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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/055688
Kind Code:
A1
Abstract:
This semiconductor device is provided with a semiconductor layer of an N-type semiconductor constituted mainly of silicon carbide, and an ohmic layer constituted mainly of titanium carbide and in ohmic contact with the semiconductor layer.

Inventors:
FUKUDA YUSUKE (JP)
Application Number:
PCT/JP2016/077803
Publication Date:
March 29, 2018
Filing Date:
September 21, 2016
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Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L21/28
Domestic Patent References:
WO2013183677A12013-12-12
Foreign References:
JP2002016017A2002-01-18
JP2015162534A2015-09-07
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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