Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/061178
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor device in which an active region can be enlarged. [Solution] A semiconductor device 1 according to an embodiment comprises an overvoltage protection diode 5 made by alternately arranging, adjacent to one another, N-type semiconductor layers 5a and P-type semiconductor layers 5b formed on an insulation film 4 in a voltage-withstanding region B. The overvoltage protection diode 5 is arranged at a corner part on an upper surface of the insulation film 4, and extends from the corner part toward a central part of a semiconductor substrate 2.
Inventors:
KOTANI RYOHEI (JP)
MATSUBARA TOSHIKI (JP)
ISHIZUKA NOBUTAKA (JP)
MIKAWA MASATO (JP)
OSHINO HIROSHI (JP)
MATSUBARA TOSHIKI (JP)
ISHIZUKA NOBUTAKA (JP)
MIKAWA MASATO (JP)
OSHINO HIROSHI (JP)
Application Number:
PCT/JP2016/078999
Publication Date:
April 05, 2018
Filing Date:
September 30, 2016
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L21/329; H01L27/04; H01L21/822; H01L29/06; H01L29/41; H01L29/739; H01L29/78; H01L29/866
Domestic Patent References:
| WO2014142331A1 | 2014-09-18 |
Foreign References:
| JPH0669423A | 1994-03-11 | |||
| JP2005217152A | 2005-08-11 |
Attorney, Agent or Firm:
NAGAI Hiroshi et al. (JP)
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