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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/123799
Kind Code:
A1
Abstract:
A semiconductor device (1) is provided with: an N-type semiconductor substrate (32) made of silicon; an N-type low-concentration impurity layer (33) in contact with an upper surface of the semiconductor substrate (32); a metal layer (31) which is in contact with an entire lower surface of the semiconductor substrate (32) and has a thickness of not less than 20 μm; and transistors (10 and 20) formed in the low-concentration impurity layer. The semiconductor substrate (32) functions as a drain region for the transistors (10 and 20). A bi-directional path of flow between the source electrodes of the transistors (10 and 20) via the semiconductor substrate (32) on the transistor (10) side, the metal layer (31), and the semiconductor substrate (32) on the transistor (20) side constitutes a main electric current path. A thickness ratio of the metal layer (31) to a semiconductor layer including the semiconductor substrate (32) and the low-concentration impurity layer (33) is greater than 0.27. The semiconductor device (1) further includes a support body (30) made of ceramic material which is adhered to the entire lower surface of the metal layer (31) only via an adhesive layer (39).

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Inventors:
MATSUSHIMA YOSHIHIRO
SOTA SHIGETOSHI
YASUDA EIJI
IMAI TOSHIKAZU
OKAWA RYOSUKE
YOSHIDA KAZUMA
KATO RYOU
Application Number:
PCT/JP2017/045908
Publication Date:
July 05, 2018
Filing Date:
December 21, 2017
Export Citation:
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L29/78; H01L21/76
Foreign References:
JP2015231033A2015-12-21
JP2016197737A2016-11-24
JP2008060105A2008-03-13
JP2007005657A2007-01-11
JP2001127290A2001-05-11
JP2004342718A2004-12-02
Attorney, Agent or Firm:
KAMATA Kenji et al. (JP)
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