Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/167925
Kind Code:
A1
Abstract:
A highly reliable semiconductor device can be obtained. A semiconductor device (11) comprises a semiconductor substrate, a first gate wiring (22) and a second gate wiring (22), a first metal part (20a), an insulating member (40), and a second metal part (20b). The first gate wiring (22) and the second gate wiring (22) are disposed, with a gap interposed therebetween, on a main surface of the semiconductor substrate. The first metal part (20a) is formed on the first gate wiring (22) and the second gate wiring (22). The first metal part (20a) has an upper surface positioned on the side opposite from the semiconductor-substrate (18) side in a region between the first gate wiring (22) and the second gate wiring (22). A recess (28) is formed in the upper surface. At least a portion of the recess (28) is embedded in the insulating member (40). The second metal part (20b) extends from the upper-part surface of the insulation member (40) to above the upper surface of the first metal part (20a).
Inventors:
FUJITA JUN (JP)
KAGUCHI NAOTO (JP)
WADA FUMIO (JP)
KAGUCHI NAOTO (JP)
WADA FUMIO (JP)
Application Number:
PCT/JP2017/010743
Publication Date:
September 20, 2018
Filing Date:
March 16, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| JP2003101024A | 2003-04-04 | |||
| JP2011199060A | 2011-10-06 | |||
| JP2010251719A | 2010-11-04 | |||
| JP2010182807A | 2010-08-19 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
Download PDF: