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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/211735
Kind Code:
A1
Abstract:
The present invention enhances the precision of detecting degradation of a semiconductor device. A first metal pattern (51) and a second metal pattern (52) are connected to a control unit (100). A bonding wire (41) connects the first metal pattern (51) and an emitter electrode (31). A linear conductor (1a) connects a first electrode pad (311) and a second electrode pad (312). First bonding wires (411-414) connect the first electrode pad (311) and the second metal pattern (52). Second bonding wires (415-418) connect the second electrode pad (312) and the second metal pattern (52). When the difference in potential between the first metal pattern (51) and the second metal pattern (52) exceeds a threshold value, the control unit (100) detects degradation of a semiconductor element (1).

Inventors:
KAWAHARA CHIHIRO (JP)
HORIGUCHI TAKESHI (JP)
TAMADA YOSHIKO (JP)
NAKAYAMA YASUSHI (JP)
Application Number:
PCT/JP2018/000012
Publication Date:
November 22, 2018
Filing Date:
January 04, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/60; H01L21/336; H01L29/78
Domestic Patent References:
WO2005038918A12005-04-28
Foreign References:
JP2004342735A2004-12-02
JPH09266226A1997-10-07
JPH11111785A1999-04-23
JP2008004728A2008-01-10
JP2009295845A2009-12-17
JP2015076442A2015-04-20
JP2006047006A2006-02-16
JP2014056968A2014-03-27
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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