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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/017104
Kind Code:
A1
Abstract:
According to the present invention, an active region (11) of a semiconductor chip (10) is provided with: an IGBT region (1) in which an IGBT is disposed; and an FWD region (2) in which an FWD connected in antiparallel to the IGBT is disposed. A plurality of FWD regions (2) are disposed so as to be apart from each other in the active region (11). The IGBT region (1) is a continuous region sandwiched between the plurality of FWD regions (2). In the IGBT region (1) and the FWD region (2), first and second gate trenches (31, 32) are respectively disposed in stripe-like layouts that are parallel to the outer surface of the semiconductor chip (10) and extend in a first direction (X). The second gate trench (32) of the FWD in the FWD region (2) is disposed apart from the first gate trench (31) of the IGBT in the IGBT region (1). Since the present invention has such a structure, deterioration of element characteristics can be prevented, heat dissipation properties of the semiconductor chip (10) can be improved, and the degree of design freedom can be improved.

Inventors:
SHIRAKAWA TOHRU (JP)
Application Number:
JP2018/021772
Publication Date:
January 24, 2019
Filing Date:
June 06, 2018
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L21/8234; H01L27/06; H01L29/06; H01L29/78
Foreign References:
US20080135871A12008-06-12
JP2016096222A2016-05-26
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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