SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2019/049013

A1

Provided is a novel semiconductor device. The semiconductor device comprises a plurality of cell arrays and a plurality of peripheral circuits, wherein each cell array has a plurality of memory cells; each peripheral circuit has a first drive circuit, a second drive circuit, a first amplification circuit, a second amplification circuit, a third amplification circuit and a fourth amplification circuit; the first drive circuit and the second drive circuit have the function of supplying a selection signal to a cell array; the first amplification circuit and the second amplification circuit have the function of amplifying a potential inputted from a cell array; the third amplification circuit and the fourth amplification circuit have the function of amplifying a potential inputted from the first amplification circuit or the second amplification circuit; the first drive circuit, the second drive circuit, the first amplification circuit, the second amplification circuit, the third amplification circuit and the fourth amplification circuit each have a region overlapping a cell array; and the memory cells include a metal oxide in the channel formation region.

ONUKI TATSUYA (JP)
MATSUZAKI TAKANORI (JP)
KATO KIYOSHI (JP)
YAMAZAKI SHUNPEI (JP)

PCT/IB2018/056697

March 14, 2019

September 03, 2018

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SEMICONDUCTOR ENERGY LAB (JP)

G11C5/02; G11C7/12; G11C11/4091; H01L21/8242; H01L27/10; H01L27/108; H01L29/786

JP2013168631A	2013-08-29
JP2012256820A	2012-12-27
JP2012256821A	2012-12-27
JP2017034249A	2017-02-09
JP2012178555A	2012-09-13
JP2009105195A	2009-05-14

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