Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/053905
Kind Code:
A1
Abstract:
This semiconductor device is provided with a nitride semiconductor layer, and a switching element that includes: first portions of first electrodes formed on the nitride semiconductor layer; second electrodes formed on the nitride semiconductor layer; and first control electrodes, which are provided between the second electrodes and the first portions of the first electrodes, and which are formed on the nitride semiconductor layer. The semiconductor device is also provided with a driving transistor that includes: second portions of the first electrodes, said second portions connecting to each other the first portions of the first electrodes adjacent to each other, and being formed on the nitride semiconductor layer; a third electrode, which is formed on the nitride semiconductor layer, and which transmits a signal to the first control electrodes; and a second control electrode, which is provided between the third electrode and the second portions of the first electrodes, and which is formed on the nitride semiconductor layer. Consequently, when the switching element is turned off, the switching element is capable of holding the off-state even if a drain voltage applied to the switching element is fluctuated.
Inventors:
MACHIDA OSAMU (JP)
TASAKA YASUSHI (JP)
TASAKA YASUSHI (JP)
Application Number:
PCT/JP2017/033611
Publication Date:
March 21, 2019
Filing Date:
September 15, 2017
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD (JP)
International Classes:
H01L21/338; H01L27/095; H01L29/41; H01L29/778; H01L29/812
Domestic Patent References:
| WO2013161138A1 | 2013-10-31 |
Foreign References:
| JP2015162625A | 2015-09-07 | |||
| JP2012191454A | 2012-10-04 | |||
| JP2012190980A | 2012-10-04 |
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