SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2019/087002

A1

Provided is a semiconductor device having excellent electrical characteristics. Also provided is a semiconductor device having stable electrical characteristics. This semiconductor device is configured to include a first insulation layer, a second insulation layer, a third insulation layer, a fourth insulation layer, a semiconductor layer, and a first conductive layer. The second insulation layer is positioned upon the first insulation layer, and the island-shaped semiconductor layer is positioned upon the second insulation layer. The second insulation layer includes an island shape having an end portion that is farther outward than a region thereof overlapping with the semiconductor layer. The fourth insulation layer covers the second insulation layer, the semiconductor layer, the third insulation layer, and the first conductive layer, is in contact with part of the upper surface of the semiconductor layer, and is in contact with the first insulation layer farther outward than the end portion of the second insulation layer. The semiconductor layer contains a metal oxide, the second insulation layer and the third insulation layer contain an oxide, the first insulation layer contains a metal oxide or a nitride, and the fourth insulation layer contains a metal nitride.

YAMAZAKI SHUNPEI (JP)
JINTYOU MASAMI
IGUCHI TAKAHIRO
SHIMA YUKINORI
OKAZAKI KENICHI (JP)

PCT/IB2018/058226

May 09, 2019

October 23, 2018

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SEMICONDUCTOR ENERGY LAB (JP)

H01L21/336; H01L29/786; H01L51/50; H05B33/14

JP2017191934A	2017-10-19
JP2016201518A	2016-12-01

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