Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/098298
Kind Code:
A1
Abstract:
Provided is a semiconductor device which can reduce reverse leakage current and furthermore can exhibit excellent semiconductor properties without said semiconductor properties being damaged even when using, for example, an n-type semiconductor (for example, gallium oxide) which has low loss at high voltage and which has a significantly higher dielectric breakdown electric field strength than SiC. This semiconductor device comprises at least: an n-type semiconductor layer including, as a main component, a crystalline oxide semiconductor (for example, α-Ga2O3) having a corundum structure; and an electric field shield layer and a gate electrode each laminated on the n-type semiconductor layer, either directly or with another layer therebetween, wherein the semiconductor device is characterized in that the electric field shield layer includes a p-type oxide semiconductor and is embedded deeper in the n-type semiconductor layer than the gate electrode.
Inventors:
MATSUDA TOKIYOSHI (JP)
SUGIMOTO MASAHIRO (JP)
SHINOHE TAKASHI (JP)
SUGIMOTO MASAHIRO (JP)
SHINOHE TAKASHI (JP)
Application Number:
PCT/JP2018/042349
Publication Date:
May 23, 2019
Filing Date:
November 15, 2018
Export Citation:
Assignee:
FLOSFIA INC (JP)
International Classes:
H01L29/78; H01L21/28; H01L21/329; H01L21/336; H01L21/337; H01L21/338; H01L29/12; H01L29/41; H01L29/47; H01L29/739; H01L29/808; H01L29/812; H01L29/872
Domestic Patent References:
| WO2016013554A1 | 2016-01-28 |
Foreign References:
| JP2016018900A | 2016-02-01 | |||
| JP2016025256A | 2016-02-08 | |||
| JP2015159271A | 2015-09-03 | |||
| JP2017055005A | 2017-03-16 | |||
| JP2012015224A | 2012-01-19 | |||
| JP2005340308A | 2005-12-08 | |||
| JP2013058637A | 2013-03-28 | |||
| JP2016025256A | 2016-02-08 | |||
| JPH0925255A | 1997-01-28 | |||
| JPH08227793A | 1996-09-03 | |||
| JPH1121687A | 1999-01-26 |
Other References:
KENTARO KINKO: "Ph.D.", March 2013, KYOTO UNIVERSITY, article "Growth and Physical Properties of Corundum-Structured Gallium Oxide-Based Mixed-Crystal Thin Films"
TATSUYA TAKEMOTOEE TIMES JAPAN: "Thermal Conductivity, P-Type.... Problems to be overcome and put into practical use", 27 February 2014, ITIMA CORPORATION, article "Power-Semiconductor Gallium Oxide"
F.P. KOFFYBERG ET AL.: "optical bandgaps and electron affinities of semiconducting Rh203(I) and Rh203(III", J. PHYS. CHEM. SOLIDS, vol. 53, no. 10, 1992, pages 1285 - 1288
HIDEO HOSONO: "Functional Development of Oxide Semiconductors", PHYSICAL PROPERTIES RESEARCH AND ELECTRONIC VERSION, vol. 3, no. 1, February 2013 (2013-02-01), pages 031211
See also references of EP 3712959A4
TATSUYA TAKEMOTOEE TIMES JAPAN: "Thermal Conductivity, P-Type.... Problems to be overcome and put into practical use", 27 February 2014, ITIMA CORPORATION, article "Power-Semiconductor Gallium Oxide"
F.P. KOFFYBERG ET AL.: "optical bandgaps and electron affinities of semiconducting Rh203(I) and Rh203(III", J. PHYS. CHEM. SOLIDS, vol. 53, no. 10, 1992, pages 1285 - 1288
HIDEO HOSONO: "Functional Development of Oxide Semiconductors", PHYSICAL PROPERTIES RESEARCH AND ELECTRONIC VERSION, vol. 3, no. 1, February 2013 (2013-02-01), pages 031211
See also references of EP 3712959A4
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