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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/123109
Kind Code:
A1
Abstract:
Provided is a semiconductor device having excellent electrical characteristics. Also provided is a semiconductor device having stable electrical characteristics. An oxide-including, island-like insulation layer is provided in contact with the lower surface of a semiconductor layer that includes a metal oxide exhibiting semiconductor characteristics. The oxide-including insulation layer is provided in contact with a section of the semiconductor layer serving as a channel formation area, and is not provided to a section serving as a low-resistance area.

Inventors:
KOEZUKA, Junichi (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
JINTYOU, Masami
SHIMA, Yukinori
Application Number:
IB2018/059899
Publication Date:
June 27, 2019
Filing Date:
December 12, 2018
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (398 Hase, Atsugi-shi Kanagawa, 36, 〒2430036, JP)
International Classes:
H01L21/336; H01L29/786
Foreign References:
JP2012049513A2012-03-08
JP2017028252A2017-02-02
JP2017076788A2017-04-20
JP2017028288A2017-02-02
JP2015005705A2015-01-08
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