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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/135265
Kind Code:
A1
Abstract:
This semiconductor device has a semiconductor substrate, first electrode, second electrode, conductive layer, insulating layer, and third electrode. The semiconductor substrate has a first main surface and a second main surface, which are facing directions opposite to each other. The first electrode and the second electrode are disposed on the first main surface. Between the first electrode and the second electrode, the third electrode is disposed on the first main surface via the insulating layer. The third electrode has: a first region that is closest to, in the third electrode, the first electrode; and a second region that is closest to, in the third electrode, the second electrode. The first region and the second region are electrically connected to each other.

Inventors:
TAKEMOTO Yoshiaki (2951 Ishikawa-machi, Hachioji-sh, Tokyo 07, 〒1928507, JP)
SAITO Haruhisa (2951 Ishikawa-machi, Hachioji-sh, Tokyo 07, 〒1928507, JP)
TADAKI Yoshitaka (2951 Ishikawa-machi, Hachioji-sh, Tokyo 07, 〒1928507, JP)
KANAZAWA Masayasu (2951 Ishikawa-machi, Hachioji-sh, Tokyo 07, 〒1928507, JP)
MURATA Ryosuke (2951 Ishikawa-machi, Hachioji-sh, Tokyo 07, 〒1928507, JP)
Application Number:
JP2018/000007
Publication Date:
July 11, 2019
Filing Date:
January 04, 2018
Export Citation:
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Assignee:
OLYMPUS CORPORATION (2951, Ishikawa-machi Hachioji-sh, Tokyo 07, 〒1928507, JP)
International Classes:
H01L31/08
Foreign References:
JPS5327382A1978-03-14
US6455858B12002-09-24
JP2017116550A2017-06-29
JP2014002155A2014-01-09
JP2004328253A2004-11-18
Attorney, Agent or Firm:
TANAI Sumio et al. (1-9-2, Marunouchi Chiyoda-k, Tokyo 20, 〒1006620, JP)
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