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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/187608
Kind Code:
A1
Abstract:
This semiconductor device is stacked on a cooling device so as to be held between cooling devices in the stacking direction. This semiconductor device comprises: an IGBT having main electrodes on both surfaces thereof; a first heat sink (14H, 14L) connected electrically to the main electrodes on one surface side and a second heat sink (18H, 18L) connected electrically to the main electrodes on the rear surface side such that the first heat sink and the second heat sink sandwich the IGBT in the Z-direction; an encapsulating resin body; a positive electrode terminal (22p) and an output terminal (23) which continue from a Y-direction side surface (14c), which is part of the first heat sink, so as to extend in the Y-direction from the side surface (14c); and an uneven oxide film formed on the heat sink surfaces. The uneven oxide film comprises a mounting surface roughened section formed on the mounting surfaces of the heat sink and side surface roughened sections (32) formed on side surfaces (18d, 18e) of the second heat sink (18H, 18L) corresponding to the side surface (14c).

Inventors:
UWATAKI Ryoji (C/O DENSO CORPORATION, 1-1 Showa-ch, Kariya-city Aichi 61, 〒4488661, JP)
FUKUOKA Daisuke (C/O DENSO CORPORATION, 1-1 Showa-ch, Kariya-city Aichi 61, 〒4488661, JP)
Application Number:
JP2019/003057
Publication Date:
October 03, 2019
Filing Date:
January 30, 2019
Export Citation:
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Assignee:
DENSO CORPORATION (1-1 Showa-cho, Kariya-city Aichi, 61, 〒4488661, JP)
International Classes:
H01L23/36; H01L25/07; H01L25/18
Foreign References:
JP2016197706A2016-11-24
JP2015018860A2015-01-29
US20060097366A12006-05-11
JP2017188534A2017-10-12
Attorney, Agent or Firm:
JIN Shunji (6th Floor, Takisada Bldg. 2-13-19, Nishiki, Naka-k, Nagoya-city Aichi 03, 〒4600003, JP)
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