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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/202430
Kind Code:
A1
Abstract:
Provided is a semiconductor device having excellent electrical characteristics. Also provided is a semiconductor device having stable electrical characteristics. The semiconductor device comprises, on an insulation surface, a first transistor and a second transistor. The first transistor and the second transistor each comprise a first insulating layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer, and a first conductive layer that is superposed above the semiconductor layer, with the second insulating layer interposed therebetween. Each first insulating layer comprises: a protruding first region that overlaps the semiconductor layer; and a second region that does not overlap the semiconductor layer and is thinner than the first region. Each first conductive layer comprises a section, above the second region, in which the lower surface of the first conductive layer is positioned lower than the lower surface of the semiconductor layer. Each second transistor further comprises a third conductive layer that is superposed above the semiconductor layer, with the first insulating layer interposed therebetween.

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Inventors:
YAMAZAKI SHUNPEI (JP)
OKAZAKI KENICHI (JP)
JINTYOU MASAMI
SHIMA YUKINORI
Application Number:
PCT/IB2019/052855
Publication Date:
October 24, 2019
Filing Date:
April 08, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; H01L21/28; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
WO2015075985A12015-05-28
Foreign References:
JP2015144266A2015-08-06
JP2015181162A2015-10-15
JP2017112374A2017-06-22
JP2015035590A2015-02-19
JP2018006734A2018-01-11
JP2003257864A2003-09-12
JP2018063743A2018-04-19
JP2017224813A2017-12-21
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