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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/203169
Kind Code:
A1
Abstract:
To provide a switching element that has been miniaturized without an increase in manufacturing cost and for which switching voltage variation increase accompanying miniaturization has been suppressed, this semiconductor device comprises a first insulation layer, a second insulation layer that is disposed on the first insulation layer and has an opening on the upper surface thereof, a first electrode that is embedded in the second insulation layer and has an end that is exposed at the opening, a variable-resistance layer that is disposed on the first electrode and second insulation layer in at least one area from among the inside and periphery of the opening, and a second electrode that is disposed on the variable-resistance layer. The opening and second electrode are formed in a shape that is stretched in at least one axial direction.

Inventors:
BANNO Naoki (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
TADA Munehiro (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
Application Number:
JP2019/016072
Publication Date:
October 24, 2019
Filing Date:
April 15, 2019
Export Citation:
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Assignee:
NEC CORPORATION (7-1 Shiba 5-chome, Minato-ku Tokyo, 01, 〒1088001, JP)
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
WO2011142386A12011-11-17
WO2014112365A12014-07-24
WO2016084349A12016-06-02
Foreign References:
JP2013168454A2013-08-29
JP2013187503A2013-09-19
Attorney, Agent or Firm:
SHIMOSAKA Naoki (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
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