Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/216052
Kind Code:
A1
Abstract:
A semiconductor device having a configuration in which cracking is prevented from occurring in a semiconductor element and the rated temperature is not exceeded when the semiconductor element is driven, the semiconductor device having a heat dissipation plate (11), the semiconductor element (12), and an output matching board (13). The heat dissipation plate (11) is made of a first metal material. The semiconductor element (12) is bonded onto the heat dissipation plate (11) by a nanoparticle bonding material (14). The output matching board (13) is bonded onto the heat dissipation plate (11) by a second metal material. The linear expansion coefficient difference between the first metal material and the semiconductor element (12) is smaller than the linear expansion coefficient difference between the semiconductor element (12) and copper. The first metal material has a higher thermal conductivity than CuW.
Inventors:
OKUDA YASUNORI (JP)
NAKAZATO TAKESHI (JP)
FUJII TOSHIHIRO (JP)
NONOMURA HIROYUKI (JP)
NAKAZATO TAKESHI (JP)
FUJII TOSHIHIRO (JP)
NONOMURA HIROYUKI (JP)
Application Number:
PCT/JP2019/013917
Publication Date:
November 14, 2019
Filing Date:
March 29, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/36; H01L21/52; H01L23/12; H01L23/14; H01L23/40
Domestic Patent References:
| WO2018020695A1 | 2018-02-01 |
Foreign References:
| JP2004200264A | 2004-07-15 | |||
| JP6274358B1 | 2018-02-07 | |||
| JP2011103353A | 2011-05-26 | |||
| JP2017059566A | 2017-03-23 | |||
| JP2004095735A | 2004-03-25 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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