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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/229593
Kind Code:
A1
Abstract:
Provided is a semiconductor device wherein calculation accuracy has been increased due to correction of a threshold value voltage. This semiconductor device has first and second current source circuits, wherein the second current source circuit has the same structure as the first current source circuit. The first current source circuit has first and second transistors, a first capacitive element, and first through third nodes. A first terminal of the first transistor is electrically connected to the first node, and a back gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitive element. A gate of the first transistor is electrically connected to the second node, and a second terminal of the first capacitive element is electrically connected to a second terminal of the first transistor. The first node of the first current source circuit is electrically connected to the respective second nodes of the first and second current source circuits. A threshold value voltage of the first transistor is corrected by writing a correction voltage to the back gate of the first transistor.

Inventors:
KOBAYASHI HIDETOMO (JP)
IKEDA TAKAYUKI (JP)
NAKAGAWA TAKASHI (JP)
HIROSE TAKEYA (JP)
KATSUI SHUICHI (JP)
Application Number:
PCT/IB2019/054254
Publication Date:
December 05, 2019
Filing Date:
May 23, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/822; H01L21/8234; H01L21/8242; H01L27/04; H01L27/06; H01L27/088; H01L27/108; H03K3/356
Domestic Patent References:
WO2018189619A12018-10-18
Foreign References:
JP2018022147A2018-02-08
JP2017168099A2017-09-21
JP2019046375A2019-03-22
JP2019046374A2019-03-22
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