Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/230851
Kind Code:
A1
Abstract:
The semiconductor device includes: a first-conduction type semiconductor layer including a first main surface located on one side thereof and a second main surface located on the other side thereof; an IGBT region including an FET structure, which includes a second-conduction type body region formed in the surface layer portion of the first main surface, a first-conduction type emitter region formed in the surface layer portion of the body region, and a gate electrode facing the body region and the emitter region via a gate insulation layer, and a second-conduction type collector region formed in the surface layer portion of the second main surface; a diode region including a second-conduction type first impurity region formed in the surface layer portion of the first main surface and a first-conduction type second impurity region formed in the surface layer portion of the second main surface; a boundary region including a second-conduction type well region formed in the surface layer portion of the first main surface in a region between the IGBT region and the diode region; and a first main surface electrode electrically connected to the emitter region, the first impurity region, and the well region on the first main surface.
Inventors:
UMEKI SHINYA (JP)
Application Number:
PCT/JP2019/021426
Publication Date:
December 05, 2019
Filing Date:
May 29, 2019
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/739; H01L21/336; H01L21/76; H01L21/8234; H01L27/06; H01L29/78; H01L29/861; H01L29/868
Foreign References:
| JP2010118642A | 2010-05-27 | |||
| JP2016174029A | 2016-09-29 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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