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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/089726
Kind Code:
A1
Abstract:
Provided is a semiconductor device having good electrical characteristics. Provided is a semiconductor device having high reliability. Provided is a semiconductor having stable electrical characteristics. The semiconductor device includes a semiconductor layer, a first insulation layer, a metal oxide layer, a conductive layer, and an insulation area. The first insulation layer covers the top surface and side surfaces of the semiconductor layer, and the conductive layer is positioned on the first insulation layer. The metal oxide layer is positioned between the first insulation layer and the conductive layer, and an end part of the metal oxide layer is positioned at a more inward side than an end part of the conductive layer. The insulation area is adjacent to the metal oxide layer, and is positioned between the first insulation layer and the conductive layer. In addition, the semiconductor layer includes a first area, a pair of second areas, and a pair of third areas. The first area overlaps the metal oxide layer and the conductive layer. The second areas, between which the first area is interposed, overlap the insulation area and the conductive layer. The third areas, between which the first area and the pair of the second areas are interposed, do not overlap the conductive layer. The third area preferably includes a part having lower resistance than the first area. The second area preferably includes a part having higher resistance than the third area.

Inventors:
NAKADA MASATAKA
IGUCHI TAKAHIRO
HOSAKA YASUHARU
SHIGENOBU TAKUMI
Application Number:
PCT/IB2019/058935
Publication Date:
May 07, 2020
Filing Date:
October 21, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L51/50; G09F9/30; H01L21/336; H01L29/786; H05B33/14
Foreign References:
JP2015188079A2015-10-29
JP2007180480A2007-07-12
JP2017034251A2017-02-09
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