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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/162620
Kind Code:
A1
Abstract:
This semiconductor device includes: a semiconductor layer having a main surface; a trench gate structure which has a first lateral wall on one side in a cross-sectional view, a second lateral wall on the other side, and a bottom wall, and which includes a trench formed in the main surface, an insulating layer formed in the inner wall of the trench, and a gate electrode embedded in the trench with the insulating layer therebetween and having an upper end portion thereof positioned on the bottom wall side with respect to the main surface; a plurality of first conductivity-type drift regions which are respectively formed in a region of the first lateral wall side and a region of the second lateral wall side of the trench so as to oppose each other with the trench therebetween in the surface layer part of the main surface and which are positioned in a region of the main surface side with respect to the bottom wall; and a plurality of first conductivity-type source drain regions which are respectively formed in the surface layer parts of the drift regions.

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Inventors:
NASU KENTARO (JP)
KONDO YASUHIRO (JP)
YOSHIOKA TAKAAKI (JP)
Application Number:
PCT/JP2020/004938
Publication Date:
August 13, 2020
Filing Date:
February 07, 2020
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088
Foreign References:
JP2008084996A2008-04-10
JPS5093779A1975-07-26
JPS5831579A1983-02-24
JP2003298048A2003-10-17
JPH03160761A1991-07-10
JPH04259258A1992-09-14
JP2001352057A2001-12-21
JP2014236159A2014-12-15
JP2002124669A2002-04-26
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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