Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/235224
Kind Code:
A1
Abstract:
A semiconductor device is provided which, even when the power supply voltage falls to a lower voltage, can maintain the power supply voltage at which a drive circuit operates. A drive circuit (30) for driving a main MOSFET (20) operates using as the power supply the potential difference between the voltage VCC of a power supply terminal (11) and the voltage of an internal ground generated by an internal ground generation circuit (40). The internal ground will not fall below a threshold voltage Vth of a MOSFET (42) that performs source-follower operation even if the voltage VCC decreases until a Zener diode (44) no longer breaks down, but, by a low-voltage detection circuit (50) detecting the decrease in the voltage VCC and switching on a pull-out reinforced MOSFET (60), the internal ground can be set to ground potential by being connected to a ground terminal (13) via an already-on MOSFET (43).
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JP5369987 | Gate drive circuit |
Inventors:
NAKAGAWA SHO (JP)
Application Number:
PCT/JP2020/014974
Publication Date:
November 26, 2020
Filing Date:
April 01, 2020
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H02M1/08; H03K17/06; H03K17/687; H03K19/00
Foreign References:
JP2015207866A | 2015-11-19 | |||
JP2018078498A | 2018-05-17 |
Attorney, Agent or Firm:
FUSO INTERNATIONAL PATENT FIRM (JP)
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