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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/235690
Kind Code:
A1
Abstract:
Provided is a low-loss semiconductor device that is particularly useful for power devices, in which a leakage current is suppressed. Provided is a semiconductor device comprising at least a semiconductor layer, which contains an oxide semiconductor having a corundum structure as a main component, and a Schottky electrode, which includes a first electrode layer and a second electrode layer having a higher conductivity than the first electrode layer, wherein the outer end of the second electrode layer is electrically connected to the semiconductor layer via the first electrode layer, and the outer end of the first electrode layer is located outside the outer end of the electrically connected region of the second electrode layer that is electrically connected.

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Inventors:
OKIGAWA MITSURU (JP)
Application Number:
PCT/JP2020/020428
Publication Date:
November 26, 2020
Filing Date:
May 22, 2020
Export Citation:
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Assignee:
FLOSFIA INC (JP)
International Classes:
H01L21/28; H01L29/47; H01L29/872
Domestic Patent References:
WO2016013554A12016-01-28
WO2015166608A12015-11-05
Foreign References:
JP2016018900A2016-02-01
JP2015115373A2015-06-22
JP2017224794A2017-12-21
JP2017118039A2017-06-29
JP2018002544A2018-01-11
Other References:
ICHINOHE, TAKAHISA: "Silver Oxide Films Fabricated by Plasma Assisted Deposition", VACUUM AND SURFACE SCIENCE, vol. 61, no. 3, 10 March 2018 (2018-03-10), pages 172 - 176, XP055762906
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