Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/246537
Kind Code:
A1
Abstract:
A semiconductor device equipped with insulated gate-type first and second transistors that are connected in parallel, a charge/discharge unit, and a gate voltage correction circuit. The charge/discharge unit is configured so as to be capable of performing a first control for charging both gates of the first and second transistors, a second control for discharging both gates of the first and second transistors, and a third control for discharging only one of the gates of the first and second transistors. During at least one of the first control, the second control, and a protection operation for forcibly turning the first and second transistors off, the gate voltage correction circuit corrects the gate voltage of each of the first and second transistors so as to eliminate any difference between the gate voltage of the first transistor and the gate voltage of the second transistor.

Inventors:
TAKAHASHI NAOKI (JP)
Application Number:
PCT/JP2020/022083
Publication Date:
December 10, 2020
Filing Date:
June 04, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/8234; H01L27/06; H03K17/08; H03K17/0812; H03K17/695
Foreign References:
JP2019080436A2019-05-23
JP2019037079A2019-03-07
JP2018037932A2018-03-08
JP2017077138A2017-04-20
JP2017073872A2017-04-13
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
Download PDF: