Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/261692
Kind Code:
A1
Abstract:
Provided is a semiconductor device, characterized in that the semiconductor device is a multi-gate transistor having a plurality of gates in a common active region, wherein: the multi-gate transistor has, respectively in a source region and in a drain region, a comb-type metal structure in which first metals are drawn out and bundled in a W length direction from contacts aligned in a single row; and the multi-gate transistor has a wiring layout in which a root section of the first metal is positioned directly above a terminal of the source region and the drain region or is disposed more toward the inside in the W length direction than the terminal of the source region and the drain region.
Inventors:
YANAGISAWA YUKI (JP)
KORIYAMA YUSHI (JP)
KORIYAMA YUSHI (JP)
Application Number:
PCT/JP2020/014998
Publication Date:
December 30, 2020
Filing Date:
April 01, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/78; H01L21/3205; H01L21/336; H01L21/768; H01L23/522
Foreign References:
| US4949139A | 1990-08-14 | |||
| JP2013008715A | 2013-01-10 |
Attorney, Agent or Firm:
SUGIURA, Masatomo et al. (JP)
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