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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/002225
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention comprises a semiconductor element, a first lead, a second lead, and a connection lead. The semiconductor element comprises: an electron transit layer formed from a nitride semiconductor; an element main face and an element rear face facing opposite sides in the through-thickness direction; and a gate electrode, source electrode, and drain electrode disposed on the element main face. The drain electrode is joined to the first lead. The source electrode is joined to the second lead. The connection lead is connected to the second lead, and is disposed on the element rear face side so as to overlap the semiconductor element as seen in the through-thickness direction. A main current that is an object of switching flows through the connection lead.

Inventors:
AKUTSU MINORU (JP)
Application Number:
JP2020/024238
Publication Date:
January 07, 2021
Filing Date:
June 19, 2020
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/812; H01L21/337; H01L21/338; H01L23/48; H01L29/778; H01L29/808
Attorney, Agent or Firm:
USUI Takashi et al. (JP)
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