Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/010336
Kind Code:
A1
Abstract:
A semiconductor device provided with a lateral transistor, wherein a source wiring layer (16b, 20b, 23b) is formed on at least a part of an interlayer dielectric (17, 18, 21), the source wiring layer (16b, 20b, 23b) being electrically connected to a source electrode (13) and constituting a source field plate by being extended on the drain region (4) side.
Inventors:
YANAGI SHINICHIRO (JP)
NONAKA YUSUKE (JP)
IKEURA SYOGO (JP)
NONAKA YUSUKE (JP)
IKEURA SYOGO (JP)
Application Number:
PCT/JP2020/027071
Publication Date:
January 21, 2021
Filing Date:
July 10, 2020
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/41; H01L29/786
Domestic Patent References:
| WO2014061254A1 | 2014-04-24 |
Foreign References:
| JP2015216218A | 2015-12-03 | |||
| JP2012256633A | 2012-12-27 | |||
| JP2007227746A | 2007-09-06 | |||
| JP2015046444A | 2015-03-12 | |||
| JP2018014395A | 2018-01-25 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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