Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/074737
Kind Code:
A1
Abstract:
According to the present invention, an amplifier is formed in a wiring layer. A semiconductor device according to the present invention comprises a second layer on a first layer, with a metal oxide being interposed therebetween. The first layer comprises a first transistor that has a first semiconductor layer containing silicon. The second layer comprises an impedance matching circuit; and the impedance matching circuit comprises a second transistor that has a second semiconductor layer containing gallium. The first transistor forms a first coupling capacitance with the metal oxide; and the impedance matching circuit forms a second coupling capacitance with the metal oxide. The impedance matching circuit is electrically connected to the metal oxide via the second coupling capacitance. The metal oxide suppresses the influence of a first irradiation noise discharged from the impedance matching circuit on the operation of the first transistor.
Inventors:
OHSHIMA KAZUAKI (JP)
KUNITAKE HITOSHI (JP)
YAKUBO YUTO (JP)
IKEDA TAKAYUKI (JP)
KUNITAKE HITOSHI (JP)
YAKUBO YUTO (JP)
IKEDA TAKAYUKI (JP)
Application Number:
PCT/IB2020/059313
Publication Date:
April 22, 2021
Filing Date:
October 05, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L27/04; H01L21/822; H01L21/8234; H01L27/06; H01L27/088; H01L29/786; H03F3/19; H03F3/60
Domestic Patent References:
| WO2015136401A1 | 2015-09-17 |
Foreign References:
| JP2015181081A | 2015-10-15 | |||
| JP2015188209A | 2015-10-29 |
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