SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2021/145217

A1

Provided is a hybrid semiconductor device (1) comprising: a light emitting element (100); a semiconductor integrated circuit element (700) including a switching element (200); and a bypass condenser (3), the light emitting element (100), the semiconductor integrated circuit element (700), and the bypass condenser (3) constituting a power loop. The light emitting element (100) and the switching element (200) form a laminated body (2) in which main surfaces of the elements are laminated in parallel and face to face. The bypass condenser (3) has one electrode (32) connected to a lower element of the laminated body (2) and the other electrode (31) connected to an upper electrode of the laminated body (2). The bypass condenser (3) is arranged in planar view so that, when a direction inside the bypass condenser (3) of extending from the one electrode (32) to the other electrode (31) is defined as a first direction, a side parallel to the first direction of the bypass condenser (3) has a portion being parallel to and further facing one side of an outer edge of the laminated body (2).

YAMAMOTO KOUKI
AKIYOSHI SHINICHI
TANIOKU MASATOSHI
TAKATA HARUHISA

PCT/JP2020/049117

July 22, 2021

December 28, 2020

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NUVOTON TECH CORPORATION JAPAN (JP)

H01L27/15; H01S5/026; H01S5/183

JP2019067831A	2019-04-25
US20180278011A1	2018-09-27
JP2019140151A	2019-08-22
JP2012151323A	2012-08-09
DE102017112101A1	2018-12-06
JP2007164173A	2007-06-28
JPH11121735A	1999-04-30
US20200185875A1	2020-06-11

NII, Hiromori et al. (JP)

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