Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/200138
Kind Code:
A1
Abstract:
This semiconductor device comprises: a substrate that is electrically conductive; a first junction that is arranged on the substrate and is electrically conductive; an SiC diode chip that is arranged on the first junction; a second junction that is arranged on the SiC diode chip and is electrically conductive; and a transistor chip that is arranged on the second junction. The SiC diode chip includes a cathode pad arranged at the end part of one side in the thickness direction, and an anode pad arranged at the end part of the other side in the thickness direction. The cathode pad is joined to the substrate by the first junction. The transistor chip includes a drain electrode that is arranged at one end part of one side in the thickness direction. The anode pad is joined with the drain electrode by the second junction. Viewed in the thickness direction of the substrate, the anode pad is arranged inside a region surrounded by the outer edge of the SiC diode chip. Viewed in the thickness direction of the substrate, the surface area of the anode pad is greater than the surface area of the transistor chip.
Inventors:
NOTSU HIROSHI (JP)
Application Number:
PCT/JP2021/010735
Publication Date:
October 07, 2021
Filing Date:
March 17, 2021
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L23/48; H01L21/52; H01L21/60; H01L25/07; H01L25/18; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Foreign References:
| JP2018064362A | 2018-04-19 | |||
| JP2006040926A | 2006-02-09 | |||
| JP2000164800A | 2000-06-16 | |||
| JP2013125889A | 2013-06-24 |
Attorney, Agent or Firm:
KITANO, Shuhei et al. (JP)
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