Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/241449
Kind Code:
A1
Abstract:
This semiconductor device comprises: an insulating film provided on a substrate; a chlorine-containing semiconductor layer provided adjacent to the insulating film; and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine-containing semiconductor layer is 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3, inclusive.

More Like This:
WO/2019/236158THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE INCLUDING CONCAVE WORD LINES AND METHOD OF MAKING THE SAME
JP7089967Semiconductor devices and their manufacturing methods
JP7058957Semiconductor devices, electronic devices
Inventors:
TAKAHASHI MASAHIRO (JP)
HORITA HIDEKI (JP)
MAEDA TATSUROU (JP)
Application Number:
PCT/JP2021/019402
Publication Date:
December 02, 2021
Filing Date:
May 21, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KOKUSAI ELECTRIC CORP (JP)
AIST (JP)
International Classes:
H01L27/11568; C23C16/34; C23C16/40; H01L21/336; H01L29/78; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
WO2015115330A12015-08-06
Foreign References:
JP2019012822A2019-01-24
JP2017168786A2017-09-21
JP2014175320A2014-09-22
JP2005197684A2005-07-21
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE,...

Next Patent: PHOTO-ALIGNMENT POLYMER, BINDER COMPOSITION, BINDER LAYER, OPTICAL LAMINATE, METHOD FOR MANUFACTURIN...