Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/034828
Kind Code:
A1
Abstract:
This semiconductor device includes: a semiconductor layer having a first main surface and a second main surface; a first-electroconductivity-type drift region formed inside the semiconductor layer; a second-electroconductivity-type base region formed on the surface layer part of the drift region; a plurality of trench structures including a first trench structure, a second trench structure, and a third trench structure, which are formed with gaps therebetween in the first main surface so as to penetrate the base region; a first region partitioned between the first trench structure and the second trench structure in the semiconductor layer; a second region partitioned between the second trench structure and the third trench structure in the semiconductor layer; a channel region controlled by the first trench structure; and a first-electroconductivity-type high-concentration region having a higher concentration than the drift region, the high-concentration region being formed in a second-main-surface-side region with respect to the base region in either of the first region or the second region.

Inventors:
MURASAKI KOHEI (JP)
Application Number:
PCT/JP2021/028665
Publication Date:
February 17, 2022
Filing Date:
August 02, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L29/739
Domestic Patent References:
WO2019230851A12019-12-05
Foreign References:
JP2004153112A2004-05-27
JP2013140885A2013-07-18
JP2019110297A2019-07-04
JP2016063072A2016-04-25
JP2020098881A2020-06-25
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
Download PDF: