SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2022/130086

A1

The present invention provides a semiconductor device that has excellent electrical characteristics. The present invention moreover provides a semiconductor device that has high reliability. The present invention moreover provides a semiconductor device having stabilized electrical characteristics. The semiconductor device has a semiconductor layer, a gate insulation layer, a gate electrode, a first insulation layer, a second insulation layer, and an electrically conductive layer. The gate insulation layer is in contact with an upper surface and a side surface of the semiconductor layer, and the gate electrode has a region that overlaps the semiconductor layer with the gate insulation layer interposed therebetween. The first insulation layer has an inorganic material, and is in contact with an upper surface of the gate insulation layer and with an upper surface and a side surface of the gate electrode. The gate insulation layer and the first insulation layer have a first opening in the region overlapping the semiconductor layer. The second insulation layer has an organic material and has a second opening inside of the first opening. The second insulation layer is in contact with an upper surface and a side surface of the first insulation layer and with a side surface of the gate insulation layer. The electrically conductive layer is electrically connected to the semiconductor layer via the second opening.

JINTYOU MASAMI
IGUCHI TAKAHIRO
SATO RAI (JP)

PCT/IB2021/061155

June 23, 2022

December 01, 2021

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SEMICONDUCTOR ENERGY LAB (JP)

H01L29/786; G02F1/1368; G09F9/30; H01L27/32; H01L51/50; H05B33/14

JP2016189461A	2016-11-04
JP2016219801A	2016-12-22
JP2011257735A	2011-12-22
JP2014160755A	2014-09-04
JP2017028288A	2017-02-02
JPH09213968A	1997-08-15

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