Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/137767
Kind Code:
A1
Abstract:
This semiconductor device comprises: a semiconductor layer having a main surface; a first conductive-type well region formed on a surface layer portion of the main surface of the semiconductor layer; a first conductive-type first impurity region formed on a surface layer portion of the well region and having an inner wall portion; and a second conductive-type annular second impurity region formed on the surface layer portion of the well region inside the inner wall part so as to form a pn junction with the well region.
Inventors:
YOSHIMURA KENICHI (JP)
Application Number:
PCT/JP2021/038943
Publication Date:
June 30, 2022
Filing Date:
October 21, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L27/04; H01L21/329; H01L27/06; H01L29/861; H01L29/868; H01L29/87
Foreign References:
| JP2013026384A | 2013-02-04 | |||
| US20070278614A1 | 2007-12-06 | |||
| JP2012049444A | 2012-03-08 | |||
| JP2002231971A | 2002-08-16 | |||
| JP2020191413A | 2020-11-26 | |||
| JPH07169980A | 1995-07-04 | |||
| JP2007335440A | 2007-12-27 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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