Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/158597
Kind Code:
A1
Abstract:
A semiconductor device comprising: a first terminal; a second terminal; a first switching element connected between the first terminal and the second terminal and having a first breakdown voltage with junction temperature dependency; and a first diode element connected in parallel with the first switching element between the first terminal and the second terminal, and having a second breakdown voltage with junction temperature dependency. The second breakdown voltage in a junction temperature range of 50℃ to 70℃, inclusive, is lower than the first breakdown voltage in a junction temperature range of 50℃ to 70℃, inclusive. The second breakdown voltage includes a third breakdown voltage at a junction temperature of 50℃, and a fourth breakdown voltage at a junction temperature of 300℃. The first breakdown voltage in the junction temperature range of 50℃ to 70℃, inclusive, is between the third breakdown voltage and the fourth breakdown voltage.
Inventors:
KANEDA TATSUSHI (JP)
OOMORI HIROTAKA (JP)
HIYOSHI TORU (JP)
EGUSA HIROSHI (JP)
OOMORI HIROTAKA (JP)
HIYOSHI TORU (JP)
EGUSA HIROSHI (JP)
Application Number:
PCT/JP2022/002472
Publication Date:
July 28, 2022
Filing Date:
January 24, 2022
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/822; H01L27/04; H02M7/48
Foreign References:
| JPH03236280A | 1991-10-22 | |||
| JP2013229956A | 2013-11-07 | |||
| JP2013236507A | 2013-11-21 | |||
| JP2011108684A | 2011-06-02 | |||
| JP2009254158A | 2009-10-29 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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