Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/238798
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which has a novel configuration. This semiconductor device comprises: a first substrate which is provided with a first peripheral circuit that has a function of driving a first memory cell; and a first memory cell layer which comprises a second substrate and a first element layer that comprises the first memory cell. The first memory cell comprises a first transistor and a first capacitor. The first transistor has a semiconductor layer which contains a metal oxide in a channel formation region. The first memory cell layer is superposed on the first substrate so as to be perpendicular or generally perpendicular to a surface of the first substrate. The second substrate comprises a circuit for writing or reading data to/from the first memory cell. The first peripheral circuit and the first memory cell are electrically connected to each other via a first through electrode that is provided in the second substrate and the first element layer.
Inventors:
MATSUZAKI TAKANORI (JP)
OKAMOTO YUKI (JP)
ONUKI TATSUYA (JP)
KUNITAKE HITOSHI (JP)
OKAMOTO YUKI (JP)
ONUKI TATSUYA (JP)
KUNITAKE HITOSHI (JP)
Application Number:
PCT/IB2022/053840
Publication Date:
November 17, 2022
Filing Date:
April 26, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L25/065; G11C11/405; H01L21/8239; H01L21/8242; H01L25/07; H01L25/18; H01L27/10; H01L27/105; H01L27/108; H01L27/1156; H01L29/786
Foreign References:
| JP2013138177A | 2013-07-11 | |||
| JP2013211091A | 2013-10-10 | |||
| JP2019061677A | 2019-04-18 | |||
| JP2013131533A | 2013-07-04 |
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