Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/239626
Kind Code:
A1
Abstract:
This semiconductor device comprises a switching circuit that switches between a conduction state and a cutoff state. The switching circuit includes a first switching element and a second switching element that are electrically connected in parallel. The first switching element is an IGBT, and the second switching element is a MOSFET. When a current flowing through the switching circuit is less than a first current value, the voltage of the second switching element is lower than that of the first switching element. When the current of the switching circuit is not less than a second current value but not more than a third current value, the threshold voltage of the second switching element is in the range of -1.0 V to +0.4 V with reference to the threshold voltage of the first switching element. The third current value is lower than or equal to the rated current of the switching circuit. The first current value is less than the third current value.
Inventors:
ONODERA KENICHI (JP)
HAYASHIGUCHI MASASHI (JP)
HAYASHIGUCHI MASASHI (JP)
Application Number:
PCT/JP2022/018652
Publication Date:
November 17, 2022
Filing Date:
April 25, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L25/07; H01L25/18; H02M7/48; H03K17/06; H03K17/567; H03K17/687
Foreign References:
| JPH04354156A | 1992-12-08 | |||
| JP2015149508A | 2015-08-20 | |||
| JP2020108225A | 2020-07-09 | |||
| JP2020088445A | 2020-06-04 |
Attorney, Agent or Firm:
USUI Takashi et al. (JP)
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