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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/140253
Kind Code:
A1
Abstract:
A semiconductor device (100) comprises: a plurality of trenches that are provided farther below a base region (14) from an upper surface of a semiconductor substrate (10), the trenches including a gate trench (G) and a dummy trench (E); a first lower end region (202) of a second conductivity type that is provided in contact with the lower ends of at least two trenches including a gate trench; a well region (11) of the second conductivity type that is disposed at a position different from the first lower end region in top view, that is provided farther below the base region from the top surface of the semiconductor substrate, and that has a higher doping concentration than the base region; and a second lower end region (205) of the second conductivity type that is provided between the first lower end region and the well region so as to be separated from the first lower end region and the well region in top view, and that is provided in contact with the lower end of at least one trench including a gate trench.

Inventors:
SAKURAI YOSUKE (JP)
NOGUCHI SEIJI (JP)
YOSHIDA KOSUKE (JP)
HAMASAKI RYUTARO (JP)
YAMADA TAKUYA (JP)
Application Number:
PCT/JP2023/001200
Publication Date:
July 27, 2023
Filing Date:
January 17, 2023
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/265; H01L21/76; H01L21/8234; H01L27/06; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
WO2022239285A12022-11-17
WO2022239284A12022-11-17
WO2022158053A12022-07-28
WO2022123923A12022-06-16
Foreign References:
JP2005142243A2005-06-02
JP2014064005A2014-04-10
JP2018037696A2018-03-08
JP2019102554A2019-06-24
JP2019216223A2019-12-19
JP2021150406A2021-09-27
US20170117397A12017-04-27
JP2019091892A2019-06-13
Attorney, Agent or Firm:
RYUKA & PARTNERS (JP)
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