Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/145256
Kind Code:
A1
Abstract:
[Problem] To further enhance driving capability regardless of the miniaturization of a fin structure. [Solution] A semiconductor device comprises: a channel layer extending from a main surface of a substrate in a direction normal to the main surface; a gate electrode provided across the channel layer in one direction in the plane of the main surface; and a gate insulating film interposed between the channel layer and the gate electrode, wherein the channel layer has at least one pair of convex structures protruding from both side surfaces in the one direction so as to respectively form angles in a cross-section in the one direction, and a pair of concave structures provided between the pair of convex structures and the substrate.
Inventors:
SUZUKI TSUYOSHI (JP)
Application Number:
PCT/JP2022/044617
Publication Date:
August 03, 2023
Filing Date:
December 02, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| US20160071933A1 | 2016-03-10 | |||
| US20090267196A1 | 2009-10-29 | |||
| JP2013191596A | 2013-09-26 | |||
| JP2014505995A | 2014-03-06 | |||
| US20140332863A1 | 2014-11-13 |
Attorney, Agent or Firm:
ITO, Manabu et al. (JP)
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