Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/157422
Kind Code:
A1
Abstract:
This semiconductor device comprises: a chip having a main surface; a first conductivity-type base region formed on the surface layer part of the main surface; a trench gate structure formed on the main surface so as to penetrate through the base region; a second conductivity-type emitter region formed in a region along the trench gate structure in the surface layer part of the base region; a first conductivity-type in-base region formed in a region between the bottom part of the base region and the bottom part of the emitter region in the base region, and having an impurity concentration higher than that of the base region; an insulating film which covers the main surface and has a connecting hole for exposing a part of the emitter region at a distance from the in-base region in a direction along the main surface; and a connecting electrode which is disposed in the connecting hole so as to be electrically connected to the base region and the emitter region.
Inventors:
OSAWA TAKAYUKI (JP)
Application Number:
PCT/JP2022/043909
Publication Date:
August 24, 2023
Filing Date:
November 29, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/329; H01L29/78; H01L21/336; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| WO2019103135A1 | 2019-05-31 |
Foreign References:
| JP2009065117A | 2009-03-26 | |||
| JP2001308328A | 2001-11-02 | |||
| JP2008103375A | 2008-05-01 | |||
| JP2018156996A | 2018-10-04 | |||
| JP2002016080A | 2002-01-18 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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