Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/188426
Kind Code:
A1
Abstract:
This semiconductor device comprises: a substrate (101) formed from a semi-insulating compound semiconductor; a first photoactive element (102) formed above the substrate (101); a second photoactive element (103) formed above the substrate (101); and an optical waveguide (104) optically connecting the first photoactive element (102) and the second photoactive element (103). Moreover, the semiconductor device further comprises an etching stop layer (106) formed above the entire substrate (101). The first photoactive element (102), the optical waveguide (104), and the second photoactive element (103) are formed above the etching stop layer (106).
Inventors:
KOBAYASHI WATARU (JP)
MITSUHARA MANABU (JP)
KANAZAWA SHIGERU (JP)
MITSUHARA MANABU (JP)
KANAZAWA SHIGERU (JP)
Application Number:
PCT/JP2022/016990
Publication Date:
October 05, 2023
Filing Date:
April 01, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/50; H01S5/026
Domestic Patent References:
| WO2019207624A1 | 2019-10-31 |
Foreign References:
| JP2014138096A | 2014-07-28 | |||
| JP2006278839A | 2006-10-12 | |||
| JP2013222795A | 2013-10-28 | |||
| JP2019079993A | 2019-05-23 | |||
| JP2004146693A | 2004-05-20 | |||
| US20140314109A1 | 2014-10-23 | |||
| US20100260220A1 | 2010-10-14 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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