Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/188755
Kind Code:
A1
Abstract:
This semiconductor device (10) comprises: a semiconductor layer (12) including a first surface (12A) and a second surface (12B) on the opposite side from the first surface (12A); a source trench (22) formed on the semiconductor layer (12), the source trench (22) including a side wall (22A) that is continuous with the second surface (12B); an insulating layer (14) formed on the second surface (12B) of the semiconductor layer (12); a buried electrode (52) that is disposed inside the source trench (22) and is separated from the side wall (22A) of the source trench (22) by the insulating layer (14); source wiring (18) formed on the insulating layer (14); and a source contact plug (26) for electrically connecting the source wiring (18) to the semiconductor layer (12). The source contact plug (26) contacts the buried electrode (52), and also contacts the semiconductor layer (12) with a portion of the side wall (22A) of the source trench (22) interposed therebetween.
Inventors:
NAGATA MASAKI (JP)
Application Number:
PCT/JP2023/002429
Publication Date:
October 05, 2023
Filing Date:
January 26, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336
Domestic Patent References:
| WO2016175152A1 | 2016-11-03 |
Foreign References:
| JP2017045776A | 2017-03-02 | |||
| US20120261746A1 | 2012-10-18 | |||
| US20130164895A1 | 2013-06-27 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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