Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189438
Kind Code:
A1
Abstract:
This semiconductor device includes: a chip having a main surface; a trench insulation structure formed on the main surface of the chip; a first conductivity-type body region formed on a surface layer section of the main surface so as to be in contact with the trench insulation structure; a second conductivity-type source region formed on a surface layer section of the body region separately from the trench insulation structure; a first conductivity-type butting region formed in a region between the trench insulation structure and the source region in the surface layer section of the body region; and a planar gate structure that passes through the sides of the butting region and covers the body region and the trench insulation structure, and that controls the inversion and non-inversion of a channel in the body region.
Inventors:
KORI MITSUHIDE (JP)
Application Number:
PCT/JP2023/009423
Publication Date:
October 05, 2023
Filing Date:
March 10, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/336; H01L29/78; H01L21/76; H01L21/8234; H01L21/8249; H01L27/06; H01L27/088; H01L29/06
Domestic Patent References:
| WO2012127960A1 | 2012-09-27 | |||
| WO2021182225A1 | 2021-09-16 | |||
| WO2012107998A1 | 2012-08-16 |
Foreign References:
| JP2011204924A | 2011-10-13 | |||
| US5585657A | 1996-12-17 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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