Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189487
Kind Code:
A1
Abstract:
This semiconductor device comprises: a metal oxide layer on an insulating surface; an oxide semiconductor layer on the metal oxide layer; and an insulating layer on the oxide semiconductor layer. The insulating layer includes a first region overlapping the oxide semiconductor layer, and the first region has a first aluminum concentration of at least 1×1017 atoms/cm3. The first region may be located at or within 50 nm from the surface of the insulating layer located on the opposite side from the oxide semiconductor layer.
Inventors:
WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
Application Number:
PCT/JP2023/009637
Publication Date:
October 05, 2023
Filing Date:
March 13, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L29/786; G09F9/30; H10K50/00
Domestic Patent References:
| WO2020066287A1 | 2020-04-02 |
Foreign References:
| JP2017228560A | 2017-12-28 | |||
| US20130146862A1 | 2013-06-13 | |||
| JP2019079986A | 2019-05-23 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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